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STSJ25NF3LL

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STSJ25NF3LL

MOSFET N-CH 30V 25A 8SOIC

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STSJ25NF3LL is an N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 25 A at 25°C (Tc), with a maximum power dissipation of 70 W (Tc). The STSJ25NF3LL offers a low on-resistance (Rds On) of 10.5 mOhm at 12.5 A and 10 V, optimized for minimal conduction losses. Key electrical characteristics include a gate charge (Qg) of 33 nC at 4.5 V and input capacitance (Ciss) of 1650 pF at 25 V. Operating at junction temperatures up to 150°C, this MOSFET is housed in an 8-SOIC package with an exposed pad for enhanced thermal performance. It is suitable for various industrial applications requiring robust power management. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 12.5A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 25 V

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