STSJ100NHS3LL
MOSFET N-CH 30V 100A 8SOICManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STSJ100NHS3LL is an N-Channel STripFET™ III power MOSFET featuring a 30V drain-source voltage. This component is designed for high-current applications, offering a continuous drain current of 100A at 25°C (Tc) and a low on-resistance of 4.2 mOhm at 10A and 10V. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge of 35 nC at 4.5V and input capacitance of 4200 pF at 25V. It dissipates up to 70W (Tc) with a maximum junction temperature of 150°C. The STSJ100NHS3LL is housed in an 8-SOIC-EP package with an exposed pad, suitable for surface mounting. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC-EP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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