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STSJ100NH3LL

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STSJ100NH3LL

MOSFET N-CH 30V 100A 8SOIC

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STSJ100NH3LL is an N-channel STripFET™ III Power MOSFET with a 30V drain-source voltage. This component features a low on-resistance of 3.5mOhm at 12.5A and 10V Vgs, with a nominal gate charge of 40nC at 4.5V Vgs. Designed for high current applications, it supports a continuous drain current of 100A at 25°C (Tc) and offers a maximum junction temperature of 150°C. The device is packaged in an 8-SOIC-EP (Exposed Pad) for efficient thermal management, dissipating up to 70W at 25°C (Tc). Key parameters include an input capacitance (Ciss) of 4450pF at 25V Vds and a gate-source voltage tolerance of ±16V. The STSJ100NH3LL is often utilized in power switching applications across automotive and industrial sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 12.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC-EP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4450 pF @ 25 V

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