STS9P2UH7
MOSFET P-CH 20V 9A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS9P2UH7 is a P-Channel STripFET™ MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 9A at 25°C (Tc). With a low on-resistance (Rds On) of 22.5mOhm at 4.5A and 4.5V, it ensures efficient power transfer. The STS9P2UH7 supports gate drive voltages from 1.5V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. Key parameters include a maximum gate charge (Qg) of 22 nC at 4.5V and input capacitance (Ciss) of 2390 pF at 16V. This component is housed in an 8-SOIC package, suitable for surface mounting, and operates at junction temperatures up to 150°C. It is supplied in Tape & Reel packaging. Typical applications for this MOSFET include power management and consumer electronics.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390 pF @ 16 V |
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