STS9NH3LL
MOSFET N-CH 30V 9A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS9NH3LL is an N-Channel STripFET™ III Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 9A at 25°C (Tc). With a maximum on-resistance of 22mOhm at 4.5A and 10V Vgs, it offers low conduction losses. The STS9NH3LL operates with gate drive voltages ranging from 4.5V to 10V, and a maximum gate-source voltage of ±16V. Key parameters include a typical gate charge of 10 nC at 4.5V and an input capacitance of 857 pF (max) at 25V. The component is housed in an 8-SOIC package for surface mounting and has a maximum power dissipation of 2.5W (Tc). It is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 857 pF @ 25 V |
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