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STS5PF30L

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STS5PF30L

MOSFET P-CH 30V 5A 8SO

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STS5PF30L is a P-Channel STripFET™ MOSFET designed for power switching applications. This device features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 5A at 25°C (Tc). The STS5PF30L exhibits a maximum on-resistance of 55mOhm at 2.5A and 10V Vgs, utilizing a gate drive voltage range of 4.5V to 10V. Key parameters include a gate charge of 16 nC at 5V Vgs and an input capacitance of 1350 pF at 25V Vds. With a maximum power dissipation of 2.5W (Tc), this MOSFET is available in an 8-SOIC surface-mount package, supplied on tape and reel. The STS5PF30L is suitable for use in automotive and industrial power management systems. It operates within a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 25 V

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