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STS5PF20V

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STS5PF20V

MOSFET P-CH 20V 5A 8SO

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STS5PF20V is a P-Channel STripFET™ II MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5A at 25°C (Tc). Its low on-resistance (Rds On) of 80mOhm is achieved at a drain current of 2.5A and a gate-source voltage (Vgs) of 4.5V. The STS5PF20V operates with a gate drive voltage range from 2.5V to 4.5V, with a maximum Vgs of ±8V. Key parameters include a maximum power dissipation of 2.5W (Tc), input capacitance (Ciss) of 412pF at 15V, and gate charge (Qg) of 6nC at 2.5V. The threshold voltage (Vgs(th)) is a maximum of 450mV at 250µA. Supplied in a Tape & Reel (TR) package, this component is configured for surface mounting within an 8-SOIC package. The STS5PF20V is suitable for use in automotive and industrial applications requiring robust power management. It is rated for an operating temperature range of -55°C to 150°C (TJ).

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 2.5A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds412 pF @ 15 V

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