STS5N15F3
MOSFET N-CH 150V 5A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STS5N15F3 is an N-channel STripFET™ III power MOSFET designed for demanding applications. This device features a 150V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C (Tc). The STS5N15F3 exhibits a maximum on-resistance (Rds On) of 57mOhm at 2.5A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 29 nC at 10V and an input capacitance (Ciss) of 1300 pF at 25V. With a maximum power dissipation of 2.5W (Tc), this MOSFET is housed in an 8-SOIC surface-mount package and operates across a temperature range of -55°C to 150°C. It is suitable for use in power supply, motor control, and automotive systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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