STS4DNFS30
MOSFET N-CH 30V 4.5A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STS4DNFS30 is an N-Channel STripFET™ MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The STS4DNFS30 offers a maximum on-resistance (Rds On) of 55mOhm at 2A and 10V, with a gate charge (Qg) of 4.7nC at 5V. It includes an integrated Schottky diode and operates with a maximum power dissipation of 2W. The device is housed in an 8-SOIC package with surface mount mounting type and is supplied on a tape and reel. Key parameters include an input capacitance (Ciss) of 330pF at 25V and a threshold voltage (Vgs(th)) of 1V at 250µA. This MOSFET is suitable for use in automotive, industrial automation, and consumer electronics sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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