STS30N3LLH6
MOSFET N-CH 30V 30A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STS30N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 30V drain-source voltage and a continuous drain current of 30A at 25°C (Tc). The STS30N3LLH6 offers a low on-resistance of 2.4mOhm maximum at 15A and 10V, with a gate threshold voltage of 1V maximum at 250µA. It is available in an 8-SOIC package and supports surface mounting. Key parameters include a maximum gate charge of 40 nC at 4.5V and input capacitance of 4040 pF maximum at 25V. The component's power dissipation is rated at 2.7W (Tc). This MOSFET is suitable for applications in automotive, industrial, and consumer electronics sectors requiring efficient power switching.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4040 pF @ 25 V |
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