STS2DPFS20V
MOSFET P-CH 20V 2.5A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS2DPFS20V is a P-Channel STripFET™ II power MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.5A at 25°C (Tc). It offers a low on-resistance of 200mOhm maximum at 1A, 4.5V Vgs, and a gate charge of 4.7 nC maximum at 4.5V. The STS2DPFS20V includes an integrated Schottky diode for enhanced performance. With a maximum power dissipation of 2W (Tc) and an operating junction temperature of 150°C, it is suitable for use in automotive and industrial applications. The component is housed in an 8-SOIC package and is supplied on tape and reel.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 15 V |