STS25NH3LL-E
MOSFET N-CH 30V 25A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STS25NH3LL-E is an N-channel Power MOSFET from the STripFET™ III series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 25A (Tc) at 25°C. With a low Rds(on) of 3.5mOhm maximum at 12.5A and 10V Vgs, it offers efficient power switching. The device has a gate charge (Qg) of 40nC maximum at 4.5V, and an input capacitance (Ciss) of 4450pF maximum at 25V. Designed for surface mounting in an 8-SOIC package, this MOSFET has a maximum power dissipation of 3.2W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). It is suitable for applications requiring high current handling and low on-resistance, often found in power management and industrial automation.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4450 pF @ 25 V |
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