STS20N3LLH6
MOSFET N-CH 30V 20A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS20N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. With a maximum on-resistance (Rds On) of 4.7mOhm at 10A and 10V, it offers efficient power handling with a maximum power dissipation of 2.7W at 25°C. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. Key electrical characteristics include input capacitance (Ciss) of 1690pF at 25V and gate charge (Qg) of 17nC at 4.5V. This MOSFET is supplied in an 8-SOIC package suitable for surface mounting and is available on tape and reel. It is commonly employed in automotive and industrial applications requiring robust power switching.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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