STS1HNK60
MOSFET N-CH 600V 300MA 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STS1HNK60 is an N-Channel SuperMESH™ Power MOSFET. This device features a drain-source breakdown voltage (Vdss) of 600V and can sustain a continuous drain current (Id) of 300mA at 25°C (Tc). The STS1HNK60 exhibits a low on-resistance (Rds On) of 8.5 Ohms maximum at 500mA and 10V Vgs. With a gate charge (Qg) of 10 nC maximum at 10V and input capacitance (Ciss) of 156 pF maximum at 25V, it is suitable for demanding power switching applications. The device is available in an 8-SOIC surface mount package, with a maximum power dissipation of 2W (Tc). Its operating temperature range is from -65°C to 150°C (TJ). This component is commonly utilized in industrial automation, consumer electronics, and power supply applications requiring high voltage switching.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
