STS19N3LLH6
MOSFET N-CH 30V 19A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS19N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component offers a 30V drain-source voltage (Vds) and a continuous drain current (Id) of 19A at 25°C case temperature. Featuring a low Rds(on) of 5.6mOhm maximum at 9.5A and 10V Vgs, it utilizes a 4.5V to 10V gate drive. The STS19N3LLH6 has a maximum gate charge (Qg) of 17nC at 15V and input capacitance (Ciss) of 1690pF at 25V. Power dissipation is rated at 2.7W (Ta). This device is packaged in an 8-SOIC outline, suitable for surface mounting, and is supplied on tape and reel. Its robust performance characteristics make it suitable for applications in automotive, industrial power control, and consumer electronics.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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