STS17NF3LL
MOSFET N-CH 30V 17A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STS17NF3LL is an N-channel STripFET™ II Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C (Tc). With a low on-resistance of 5.5mOhm maximum at 8.5A and 10V Vgs, it minimizes conduction losses. The STS17NF3LL offers a gate threshold voltage of 1V maximum and a gate charge of 35nC maximum at 4.5V Vgs, facilitating fast switching speeds. It supports a wide gate-source voltage range of ±18V and operates reliably across an extended temperature range of -55°C to 175°C (TJ). Packaged in an 8-SOIC (0.154" width) surface-mount format, this component is suitable for high-density power management solutions in automotive, industrial automation, and consumer electronics sectors. The power dissipation is rated at 3.2W (Tc).
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 25 V |
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