STS15N4LLF3
MOSFET N-CH 40V 15A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS15N4LLF3 is an N-Channel STripFET™ Power MOSFET with a drain-source breakdown voltage (Vdss) of 40V. This device features a maximum continuous drain current (Id) of 15A at 25°C (Tc) and a low on-resistance (Rds On) of 5mOhm at 7.5A and 10V gate-source voltage. The STS15N4LLF3 is designed for efficient power switching with a gate charge (Qg) of 28nC at 4.5V. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration and supports a maximum power dissipation of 2.7W (Tc). The operating temperature range is -55°C to 150°C (TJ). This component is suitable for various applications including automotive and industrial power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2530 pF @ 25 V |
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