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STS14N3LLH5

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STS14N3LLH5

MOSFET N-CH 30V 14A 8SO

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STS14N3LLH5 is an N-Channel STripFET™ V Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 14A at 25°C (Tc) with a maximum power dissipation of 2.7W (Tc). The STS14N3LLH5 offers a low on-resistance of 6mOhm at 7A and 10V Vgs, making it suitable for applications requiring minimal conduction losses. Key parameters include a gate charge (Qg) of 12 nC at 4.5V, an input capacitance (Ciss) of 1500 pF at 25V, and a threshold voltage (Vgs(th)) of 1V at 250µA. It operates across a temperature range of -55°C to 150°C (TJ) and is housed in an 8-SOIC package, ideal for surface mounting. This component finds utility in various industries including automotive, industrial, and consumer electronics.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)2.7W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V

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