STS13N3LLH5
MOSFET N-CH 30V 13A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS13N3LLH5 is an N-Channel STripFET™ V series Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 13A at 25°C (Tc), with a maximum power dissipation of 2.7W (Tc). The low on-resistance (Rds On) of 6.6mOhm at 6.5A and 10V (Vgs) is achieved with a gate drive of 4.5V to 10V. Key parameters include input capacitance (Ciss) of 1500pF at 25V (Vds) and a gate charge (Qg) of 12nC at 4.5V (Vgs). It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in an 8-SOIC package suitable for surface mounting. The STS13N3LLH5 is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +22V, -20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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