STS12NH3LL
MOSFET N-CH 30V 12A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STS12NH3LL is an N-Channel MOSFET from the STripFET™ series, designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 12 A at 25°C, with a maximum power dissipation of 2.7 W. The low on-resistance (Rds On) of 10.5 mOhm at 6 A and 10 V, coupled with a gate threshold voltage (Vgs(th)) of 1 V, ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 12 nC at 4.5 V and input capacitance (Ciss) of 965 pF at 25 V. Operating across a temperature range of -55°C to 150°C, this surface-mount component is housed in an 8-SOIC package and supplied on tape and reel. Its specifications make it suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 965 pF @ 25 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
