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STS12NF30L

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STS12NF30L

MOSFET N-CH 30V 12A 8SO

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STS12NF30L is an N-Channel Power MOSFET from the STripFET™ II series. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 12A at 25°C (Tc). Designed for surface mounting, it is supplied in an 8-SOIC package. The STS12NF30L exhibits a low on-resistance (Rds On) of 9mOhm at 6A and 10V Vgs, with a Vgs(th) of 1V at 250µA. Key parameters include a gate charge (Qg) of 50 nC at 4.5V and an input capacitance (Ciss) of 2400 pF at 25V. Maximum power dissipation is rated at 2.5W (Ta). This device is suitable for applications in automotive and industrial power management. The operating junction temperature range is -55°C to 150°C.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V

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