STS11NF30L
MOSFET N-CH 30V 11A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS11NF30L is an N-Channel Power MOSFET from the STripFET™ II series. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 11A at 25°C (Tc). The STS11NF30L exhibits a low on-resistance of 10.5mOhm maximum at 5.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 30 nC maximum at 5V and input capacitance (Ciss) of 1440 pF maximum at 25V. Designed for surface mounting, it comes in an 8-SOIC package. This component is suitable for applications in automotive and industrial power management. The maximum power dissipation is rated at 2.5W (Tc) with an operating temperature range of -55°C to 150°C.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
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