STS11N3LLH5
MOSFET N-CH 30V 11A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS11N3LLH5 is an N-Channel STripFET™ V power MOSFET designed for efficient power management applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 11A at 25°C (Tc). With a maximum on-resistance (Rds On) of 14mOhm at 5.5A and 10V Vgs, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a typical gate charge (Qg) of 5 nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 724 pF at 25V. This MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 150°C. Power dissipation is rated at 2.7W (Tc). The STS11N3LLH5 finds application in various industrial sectors including automotive, power supplies, and motor control.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +22V, -20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 724 pF @ 25 V |
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