STS10PF30L
MOSFET P-CH 30V 10A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STS10PF30L is a P-Channel STripFET™ II Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). The STS10PF30L offers a low on-resistance (Rds On) of 14mOhm maximum at 5A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 39nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 2300pF maximum at 25V Vds. With a maximum power dissipation of 2.5W (Tc), it is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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