STS10N3LH5
MOSFET N-CH 30V 10A 8SOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STS10N3LH5 is an N-channel STripFET™ V series power MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 10A at 25°C (Tc). With a low on-resistance (Rds On) of 21mOhm maximum at 5A and 10V Vgs, it minimizes conduction losses. The STS10N3LH5 has a gate charge (Qg) of 4.6 nC maximum at 5V Vgs and an input capacitance (Ciss) of 475 pF maximum at 25V Vds. It supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±22V. The component is packaged in an 8-SOIC (0.154", 3.90mm Width) and is supplied on tape and reel. Its maximum power dissipation is 2.5W (Tc), and it operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 25 V |
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