STQ3NK50ZR-AP
MOSFET N-CH 500V 500MA TO92-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STQ3NK50ZR-AP is a 500V N-Channel SuperMESH™ Power MOSFET in a TO-92-3 package. This device features a continuous drain current of 500mA (Tc) and a maximum power dissipation of 3W (Tc). The Rds(on) is specified at 3.3 Ohm maximum at 1.15A, 10V. Gate charge (Qg) is a maximum of 15 nC at 10V, and input capacitance (Ciss) is 280 pF maximum at 25V. The device operates over a temperature range of -55°C to 150°C. This component is suitable for applications in power supplies, lighting, and general-purpose power switching.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |