STQ3N45K3-AP
MOSFET N-CH 450V 600MA TO92-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, part number STQ3N45K3-AP, offers a 450V drain-source voltage rating and a continuous drain current of 600mA at 25°C. This through-hole TO-92-3 packaged device features a maximum on-resistance of 3.8 Ohm at 500mA and 10V Vgs. With a gate charge of 6 nC, input capacitance of 150 pF, and a maximum junction temperature of 150°C, it is suitable for applications requiring efficient switching. The STMicroelectronics STQ3N45K3-AP is utilized in power supply units, lighting control, and general-purpose power switching across various industrial and consumer electronics sectors. This component is supplied in Tape & Box packaging.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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