STQ1HN60K3-AP
MOSFET N-CH 600V 400MA TO92-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STQ1HN60K3-AP is a SuperMESH3™ N-channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 400mA at 25°C. With a maximum Power Dissipation of 3W (Tc) and an Rds(on) of 8 Ohm at 600mA and 10V, it offers efficient switching characteristics. The device is packaged in a TO-92-3 (TO-226AA) through-hole configuration, supplied on cut tape. Key parameters include a Gate Charge (Qg) of 9.5 nC at 10V and an Input Capacitance (Ciss) of 140 pF at 50V. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in power supply units, lighting, and industrial control systems.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 50 V |
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