STP9NM60N
MOSFET N-CH 600V 6.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP9NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 6.5 A at 25°C. The device offers a maximum power dissipation of 70 W and a low on-resistance of 745 mOhm at 3.25 A and 10 V drive voltage. Key parameters include a gate charge (Qg) of 17.4 nC at 10 V and input capacitance (Ciss) of 452 pF at 50 V. The STP9NM60N is housed in a TO-220-3 through-hole package and operates at junction temperatures up to 150°C. This MOSFET is commonly utilized in power supply units, lighting, and industrial applications requiring high voltage switching.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 745mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 452 pF @ 50 V |
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