STP9NM40N
MOSFET N-CH 400V 5.6A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ II series STP9NM40N is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 400 V and a continuous Drain current (Id) of 5.6 A at 25°C, with a maximum power dissipation of 60 W (Tc). The STP9NM40N offers a low on-resistance (Rds On) of 790 mOhm at 2.5 A and 10 V, and a gate charge (Qg) of 14 nC at 10 V. Its input capacitance (Ciss) is rated at 365 pF at 50 V. This through-hole device is packaged in a standard TO-220-3 configuration, suitable for demanding thermal management. The operating temperature range extends up to 150°C (TJ). Applications for this MOSFET include power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 790mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 50 V |