STP95N04
MOSFET N-CH 40V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP95N04, an N-Channel STripFET™ Power MOSFET, offers a 40V drain-to-source voltage and a continuous drain current capability of 80A at 25°C (Tc). This component is housed in a standard TO-220-3 through-hole package, facilitating robust thermal management with a maximum power dissipation of 110W (Tc). Key electrical specifications include a low on-resistance of 6.5mOhm at 40A and 10V gate drive, and a gate charge of 54 nC at 10V. Input capacitance (Ciss) is specified at 2200 pF. The STP95N04 operates across a wide temperature range from -55°C to 175°C (TJ). This device is well-suited for applications in automotive, industrial power control, and high-power switching systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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