STP90N6F6
MOSFET N-CH 60V 84A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP90N6F6 is an N-Channel Power MOSFET featuring STripFET™ VI technology and DeepGATE™ architecture. This component offers a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 84A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The low on-resistance (Rds On) is 6.8mOhm at 38.5A and 10V drive voltage, facilitated by a gate charge (Qg) of 74.9 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 4295 pF at 25V. The STP90N6F6 is housed in a standard TO-220 package with a through-hole mounting type and operates at temperatures up to 175°C (TJ). This device is suitable for applications in power management, automotive systems, and industrial power supplies.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 38.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 74.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4295 pF @ 25 V |
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