STP90N4F3
MOSFET N-CH 40V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP90N4F3 is a STripFET™ III series N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 6.5mOhm maximum at 40A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 110W (Tc), it is suitable for high-power switching and motor control applications across various industries including automotive and industrial automation. The STP90N4F3 is housed in a standard TO-220AB package for through-hole mounting and operates within a temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 54 nC (max) at 10V and input capacitance (Ciss) of 2200 pF (max) at 25V.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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