STP8NS25
MOSFET N-CH 250V 8A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP8NS25 is an N-Channel Power MOSFET from the MESH OVERLAY™ series, featuring a 250V drain-source voltage and 8A continuous drain current at 25°C. This through-hole component, packaged in a TO-220AB, offers a maximum power dissipation of 80W (Tc). Key electrical parameters include a maximum on-resistance of 450mOhm at 4A, 10V, and a gate charge of 51.8nC at 10V. The device operates up to a junction temperature of 150°C. Applications span industrial automation, power supply units, and motor control systems.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 51.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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