STP8NM60ND
MOSFET N-CH 600V 7A TO220-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP8NM60ND is an N-channel Power MOSFET from the FDmesh™ II series, designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C (Tc). With a maximum power dissipation of 70W (Tc), it offers a low on-resistance (Rds On) of 700mOhm at 3.5A and 10V. The STP8NM60ND has a gate charge (Qg) of 22nC at 10V and an input capacitance (Ciss) of 560pF at 50V. It is available in a TO-220-3 package for through-hole mounting and operates at junction temperatures up to 150°C. This component is suitable for use in industrial power supplies, lighting, and power factor correction circuits.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
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