STP8NM60N
MOSFET N-CH 600V 7A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP8NM60N, an N-Channel MOSFET from the MDmesh™ II series, offers a 600V drain-source breakdown voltage and 7A continuous drain current at 25°C. This through-hole device, packaged in a TO-220AB, features a maximum on-resistance of 650mOhm at 3.5A and 10V Vgs. With a gate charge of 19 nC and input capacitance of 560 pF, it is suitable for power switching applications. The component's 70W power dissipation and -55°C to 150°C operating temperature range make it a robust solution for power factor correction, switch mode power supplies, and high voltage switching applications across industrial and consumer electronics.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
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