STP8NM60D
MOSFET N-CH 600V 8A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP8NM60D is an N-Channel Power MOSFET from the MDmesh™ series. This component offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The device features an Rds(on) of 1 Ohm maximum at 2.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 18 nC maximum at 10V and input capacitance (Ciss) of 380 pF maximum at 25V. The STP8NM60D is housed in a TO-220-3 package for through-hole mounting. This MOSFET is suitable for applications in power factor correction (PFC), switch mode power supplies (SMPS), and general-purpose power switching across various industrial sectors.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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