STP80PF55
MOSFET P-CH 55V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP80PF55 is a P-Channel STripFET™ II Power MOSFET with a drain-source voltage (Vdss) of 55 V. This device offers a continuous drain current (Id) of 80A at 25°C (Tc) and a maximum power dissipation of 300W (Tc). The on-resistance (Rds On) is a maximum of 18mOhm at 40A and 10V gate-source voltage (Vgs). Featuring a gate charge (Qg) of 258 nC at 10V and input capacitance (Ciss) of 5500 pF at 25V, this MOSFET operates within a temperature range of -55°C to 175°C (TJ). The STP80PF55 is packaged in a TO-220AB format for through-hole mounting. Applications include power management and motor control systems across various industrial sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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