STP80NF70
MOSFET N-CH 68V 98A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP80NF70 is an N-channel Power MOSFET from the STripFET™ II series, designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 68V and a continuous Drain Current (Id) of 98A at 25°C (Tc), with a maximum power dissipation of 190W (Tc). The low on-resistance, specified at 9.8mOhm @ 40A, 10V (Vgs), is a key characteristic for efficient power switching. The device has a typical Gate Charge (Qg) of 75 nC at 10V (Vgs) and an Input Capacitance (Ciss) of 2550 pF at 25V (Vds). Operating over a temperature range of -55°C to 175°C (TJ), it utilizes a TO-220-3 through-hole package. This MOSFET is commonly employed in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 68 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 25 V |
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