STP80NF55-08
MOSFET N-CH 55V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP80NF55-08 is an N-Channel STripFET™ Power MOSFET with a 55V drain-source voltage (Vdss). This device offers a continuous drain current (Id) of 80A at 25°C (Tc) and a maximum power dissipation of 300W (Tc). Key parameters include a low on-resistance (Rds On) of 8mOhm at 40A and 10V, and a gate charge (Qg) of 155 nC at 10V. The input capacitance (Ciss) is 3850 pF at 25V. It features a through-hole mounting type in a TO-220-3 package. Operating temperature ranges from -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |