STP80NF55-06FP
MOSFET N-CH 55V 60A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ II series N-Channel Power MOSFET, part number STP80NF55-06FP, features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 60A at 25°C. This device offers a low on-resistance (Rds On) of 6.5mOhm maximum at 40A and 10V gate drive. With a gate charge (Qg) of 189 nC maximum at 10V and input capacitance (Ciss) of 4400 pF maximum at 25V, it is suitable for applications requiring efficient switching. The STP80NF55-06FP has a maximum power dissipation of 45W at 25°C, a junction temperature range of -55°C to 175°C, and is housed in a TO-220FP package for through-hole mounting. This component finds application in power supply units and motor control systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |