STP80NF06
MOSFET N-CH 60V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP80NF06 is an N-Channel Power MOSFET from the STripFET™ II series. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current of 80A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it features a low on-resistance (Rds On) of 8mOhm at 40A and 10V. The device has a gate charge (Qg) of 150 nC (max) at 10V and an input capacitance (Ciss) of 3850 pF (max) at 25V. The STP80NF06 operates at temperatures up to 175°C (TJ) and is housed in a TO-220-3 through-hole package. This MOSFET is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |
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