STP80NE06-10
MOSFET N-CH 60V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP80NE06-10 is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a 60V drain-source voltage and a continuous drain current capability of 80A at 25°C, this component offers a low on-resistance of 10mOhm at 40A and 10V Vgs. The device boasts a maximum power dissipation of 150W (Tc) and operates efficiently up to a junction temperature of 175°C. With a gate charge of 140 nC at 10V and an input capacitance of 10000 pF at 25V, it ensures robust switching performance. Packaged in a standard TO-220AB through-hole configuration, the STP80NE06-10 is suitable for use in industrial, automotive, and power supply systems where high current handling and thermal management are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
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