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STP80NE06-10

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STP80NE06-10

MOSFET N-CH 60V 80A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP80NE06-10 is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a 60V drain-source voltage and a continuous drain current capability of 80A at 25°C, this component offers a low on-resistance of 10mOhm at 40A and 10V Vgs. The device boasts a maximum power dissipation of 150W (Tc) and operates efficiently up to a junction temperature of 175°C. With a gate charge of 140 nC at 10V and an input capacitance of 10000 pF at 25V, it ensures robust switching performance. Packaged in a standard TO-220AB through-hole configuration, the STP80NE06-10 is suitable for use in industrial, automotive, and power supply systems where high current handling and thermal management are critical.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10000 pF @ 25 V

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