STP80N70F4
MOSFET N-CH 68V 85A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP80N70F4 is a N-Channel Power MOSFET from the DeepGATE™ and STripFET™ series. This through-hole component, housed in a TO-220 package, offers a drain-source voltage (Vdss) of 68 V and a continuous drain current (Id) of 85 A at 25°C (Tc). With a maximum power dissipation of 150 W (Tc) and a low on-resistance (Rds On) of 9.8 mOhm at 40 A and 10 V drive voltage, it is engineered for efficient power handling. Key electrical characteristics include a gate charge (Qg) of 90 nC (max) at 10 V and an input capacitance (Ciss) of 5600 pF (max) at 25 V. The device operates across a broad temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V. This MOSFET finds application in power supply units, automotive systems, and industrial automation.
Additional Information
Series: DeepGATE™, STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 68 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
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