STP80N6F6
MOSFET N-CH 60V 110A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP80N6F6 is a 60V N-Channel STripFET™ VI Power MOSFET. Designed for demanding applications, this component features a continuous drain current of 110A at 25°C (Tc) and a maximum power dissipation of 120W (Tc). Key electrical characteristics include a low on-resistance of 5.8mOhm at 50A and 10V (Vgs), an input capacitance (Ciss) of 7480pF at 25V (Vds), and a gate charge (Qg) of 122nC at 10V (Vgs). The STP80N6F6 operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220-3 package for through-hole mounting. This device is AEC-Q101 qualified and suitable for automotive applications.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7480 pF @ 25 V |
| Qualification | AEC-Q101 |