STP7NM60N
MOSFET N-CH 600V 5A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP7NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 5 A at 25°C (Tc). With a maximum power dissipation of 45 W (Tc), it is housed in a TO-220 package for through-hole mounting. Key electrical characteristics include a maximum on-resistance (Rds On) of 900 mOhm at 2.5 A and 10 V, and a gate charge (Qg) of 14 nC at 10 V. Input capacitance (Ciss) is 363 pF at 50 V. The operating junction temperature range is 150°C. This component is suitable for applications in power supply units and industrial power control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 50 V |