STP7NB60
MOSFET N-CH 600V 7.2A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP7NB60 is a PowerMESH™ series N-Channel MOSFET designed for high-voltage applications. This through-hole component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7.2A at 25°C. With a maximum on-resistance (Rds On) of 1.2 Ohm at 3.6A and 10V gate-source voltage, it offers efficient power switching. The device supports a gate drive voltage of 10V for achieving its specified Rds On. Key parameters include a gate charge (Qg) of 45 nC @ 10V and input capacitance (Ciss) of 1625 pF @ 25V. Rated for 125W power dissipation at the case temperature, it operates within an extended junction temperature range up to 150°C. The STP7NB60 is commonly utilized in power supply units, industrial motor control, and lighting applications. It is supplied in a standard TO-220AB package.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1625 pF @ 25 V |
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