STP7N65M2
MOSFET N-CH 650V 5A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP7N65M2 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 5 A at 25°C. With a maximum On-Resistance (Rds On) of 1.15 Ohms at 2.5 A and 10 V Vgs, it offers efficient power handling with a maximum power dissipation of 60 W (Tc). The MDmesh™ series technology ensures optimized performance characteristics, including a gate charge (Qg) of 9 nC at 10 V and input capacitance (Ciss) of 270 pF at 100 V. This device is packaged in a standard TO-220-3 through-hole configuration, suitable for various power supply, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 100 V |
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