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STP78N75F4

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STP78N75F4

MOSFET N-CH 75V 78A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP78N75F4 is an N-Channel STripFET™ DeepGATE™ power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 78A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 11mOhm is achieved at 39A and 10V Vgs, facilitated by a 10V gate drive. Key parameters include a maximum Gate Charge (Qg) of 76 nC at 10V and input capacitance (Ciss) of 5015 pF at 25V. The STP78N75F4 utilizes TO-220-3 through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly found in power supply units, automotive systems, and industrial motor control.

Additional Information

Series: DeepGATE™, STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 39A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5015 pF @ 25 V

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