STP77N6F6
MOSFET N-CH 60V 77A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP77N6F6 is a 60V N-Channel STripFET™ VI Power MOSFET. This device features a low Rds(on) of 7mOhm maximum at 38.5A and 10V Vgs, with a continuous drain current capability of 77A at 25°C. The STP77N6F6 boasts a maximum power dissipation of 80W and a low gate charge of 76 nC at 10V. It is packaged in a standard TO-220-3 through-hole configuration. Key parameters include a Vgs(th) of 4V and an input capacitance (Ciss) of 5300 pF. This component is suitable for applications in industrial power supplies, automotive systems, and power switching applications. The operating temperature range is -55°C to 175°C.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 38.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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